Conduction in thin films of r.f. reactively sputtered zinc sulphide
Identifieur interne : 001698 ( France/Analysis ); précédent : 001697; suivant : 001699Conduction in thin films of r.f. reactively sputtered zinc sulphide
Auteurs : H. Murray [France] ; A. Tosser [France]Source :
- Thin Solid Films [ 0040-6090 ] ; 1974.
Abstract
Experiments on d.c. electrical conduction in thin films of r.f. reactively sputtered zinc sulphide (thicknesses from 100 to 1000 Å) sandwiched between Al and Au are described. For an electric field between 105 and 106 V cm-1, the plot of log J versus √V is linear; the thermal evolution of the current is described by log J ∼T-1/3. It is therefore assumed that the electrical conduction is due to the emission of electrons from defects into the conduction band of the zinc sulphide.
Url:
DOI: 10.1016/0040-6090(74)90277-6
Affiliations:
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ISTEX:CC6292BC88BA329B3199093B853F538AF1576B17Le document en format XML
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<front><div type="abstract" xml:lang="en">Experiments on d.c. electrical conduction in thin films of r.f. reactively sputtered zinc sulphide (thicknesses from 100 to 1000 Å) sandwiched between Al and Au are described. For an electric field between 105 and 106 V cm-1, the plot of log J versus √V is linear; the thermal evolution of the current is described by log J ∼T-1/3. It is therefore assumed that the electrical conduction is due to the emission of electrons from defects into the conduction band of the zinc sulphide.</div>
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